CSD19533KCS

CSD19533KCS Overview

Product belongs to the CSD19533KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 188 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 2 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 86 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.8 V Vgs-th gate-source threshold voltage for efficient power management. The 10.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 12 ns This product has a 7 ns. Qg-Gate-Charge is 27 nC. This product features a 115 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD19533KCS Image

CSD19533KCS Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD19533KCS
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Tradename NexFET
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 188 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2 ns
• Rise-Time 5 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 86 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Vgs-th-Gate-Source-Threshold-Voltage 2.8 V
• Rds-On-Drain-Source-Resistance 10.5 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 12 ns
• Typical-Turn-On-Delay-Time 7 ns
• Qg-Gate-Charge 27 nC
• Forward-Transconductance-Min 115 S
• Channel-Mode Enhancement

CSD19533KCS FAQ

• A: At what frequency does the Series?

  Q: The product Series is CSD19533KCS.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.211644 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Tradename?

  Q: The product Tradename is NexFET.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 188 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 2 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 5 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 86 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.8 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 10.5 mOhms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 12 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 7 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 27 nC.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 115 S.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement