CSD23381F

Mfr. #: CSD23381F
製造商: Texas Instruments
描述:
生命週期: 製造商新產品
數據表: CSD23381F 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD23381F Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single Channel This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 12V This product has an 236pF @ 6V value of 300pF @ 25V. This product's Standard. 2.3A (Ta) continuous drain-ID current at 25°C; This product has an 175 mOhm @ 500mA, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 7 ns of 16 ns. This product has a 3.9 ns of 16 ns. This product's - 8 V. The ID of continuous drain current is - 2.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 12 V. This product has a - 950 mV Vgs-th gate-source threshold voltage for efficient power management. The 175 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 18 ns This product has a 4.5 ns. Qg-Gate-Charge is 1.14 nC. This product features a 2 S of 500 S for high performance.

CSD23381F Image

CSD23381F

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD23381F Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 3-XFDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 3-PICOSTAR
  • Configuration Single Channel
  • FET-Type MOSFET P-Channel, Metal Oxide
  • Power-Max 500mW
  • Transistor-Type 1 P-Channel
  • Drain-to-Source-Voltage-Vdss 12V
  • Input-Capacitance-Ciss-Vds 236pF @ 6V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 2.3A (Ta)
  • Rds-On-Max-Id-Vgs 175 mOhm @ 500mA, 4.5V
  • Vgs-th-Max-Id 1.2V @ 250μA
  • Gate-Charge-Qg-Vgs 1.14nC @ 4.5V
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 7 ns
  • Rise-Time 3.9 ns
  • Vgs-Gate-Source-Voltage - 8 V
  • Id-Continuous-Drain-Current - 2.3 A
  • Vds-Drain-Source-Breakdown-Voltage - 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 950 mV
  • Rds-On-Drain-Source-Resistance 175 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 18 ns
  • Typical-Turn-On-Delay-Time 4.5 ns
  • Qg-Gate-Charge 1.14 nC
  • Forward-Transconductance-Min 2 S

CSD23381F

CSD23381F Specifications

CSD23381F FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 3-XFDFN

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 3-PICOSTAR.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single Channel.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET P-Channel, Metal Oxide.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 P-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 12V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 236pF @ 6V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 2.3A (Ta).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 175 mOhm @ 500mA, 4.5V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 7 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 3.9 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is - 8 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed - 2.3 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is - 12 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 950 mV.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 175 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is P-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 18 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 4.5 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 1.14 nC

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 2 S

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