CSD25481F4

Mfr. #: CSD25481F4
製造商: Texas Instruments
描述: MOSFET P-CH 20V 2.5A 3PICOSTAR
生命週期: 製造商新產品
數據表: CSD25481F4 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25481F4 Overview

Product belongs to the CSD25481F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. PicoStar-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.7 ns of 16 ns. This product has a 3.6 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 950 mV Vgs-th gate-source threshold voltage for efficient power management. The 105 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 16.9 ns This product has a 4.1 ns. Qg-Gate-Charge is 0.913 nC. This product features a 3.3 S of 500 S for high performance.

CSD25481F4 Image

CSD25481F4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25481F4 Specifications
  • Manufacturer TI
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25481F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case PicoStar-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.7 ns
  • Rise-Time 3.6 ns
  • Vgs-Gate-Source-Voltage - 12 V
  • Id-Continuous-Drain-Current - 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 950 mV
  • Rds-On-Drain-Source-Resistance 105 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 16.9 ns
  • Typical-Turn-On-Delay-Time 4.1 ns
  • Qg-Gate-Charge 0.913 nC
  • Forward-Transconductance-Min 3.3 S

CSD25481F4

CSD25481F4 Specifications

CSD25481F4 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD25481F4.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is PicoStar-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single Channel.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 6.7 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 3.6 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is - 12 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 2.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 20 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed - 950 mV

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 105 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is P-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 16.9 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 4.1 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 0.913 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 3.3 S.

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