CSD25484F4T

Mfr. #: CSD25484F4T
製造商: Texas Instruments
描述: MOSFET P-CH 20V 2.5A 3PICOSTAR
生命週期: 製造商新產品
數據表: CSD25484F4T 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25484F4T Overview

Product belongs to the CSD25484F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: FemtoFET. LGA-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 P-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8.5 ns of 16 ns. This product has a 5 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 1.2 V Vgs-th gate-source threshold voltage for efficient power management. The 825 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 18 ns This product has a 9.5 ns. Qg-Gate-Charge is 1090 pC. This product features a 3.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD25484F4T Image

CSD25484F4T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25484F4T Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25484F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename FemtoFET
  • Package-Case LGA-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8.5 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage - 12 V
  • Id-Continuous-Drain-Current - 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 1.2 V
  • Rds-On-Drain-Source-Resistance 825 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 18 ns
  • Typical-Turn-On-Delay-Time 9.5 ns
  • Qg-Gate-Charge 1090 pC
  • Forward-Transconductance-Min 3.5 S
  • Channel-Mode Enhancement

CSD25484F4T

CSD25484F4T Specifications

CSD25484F4T FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD25484F4

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is FemtoFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed LGA-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 P-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 8.5 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 5 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed - 12 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 2.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 20 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 1.2 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 825 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 18 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 9.5 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 1090 pC

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 3.5 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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