| Mfr. #: | CSD87312Q3E |
|---|---|
| 製造商: | Texas Instruments |
| 描述: | MOSFET 2N-CH 30V 27A 8VSON |
| 生命週期: | 製造商新產品 |
| 數據表: | CSD87312Q3E 數據表 |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-VSON (5x6) Configuration Dual Common Source This product uses an 2 N-Channel (Dual) Common Source FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 1250pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 27A continuous drain-ID current at 25°C; This product has an 33 mOhm @ 7A , 8V of 12 Ohm @ 150mA, 0V. Power-off control: 2.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.8 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 27 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 38 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 17 ns This product has a 7.8 ns. Qg-Gate-Charge is 6.3 nC. This product features a 39 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD87312Q3E Specifications
A: At what frequency does the Series?
Q: The product Series is NexFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 8-PowerTDFN.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 2 Channel
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 8-VSON (5x6).
A: What is the Configuration of the product?
Q: The Configuration of the product is Dual Common Source.
A: At what frequency does the FET-Type?
Q: The product FET-Type is 2 N-Channel (Dual) Common Source.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 2 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1250pF @ 15V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Logic Level Gate.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 27A.
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 33 mOhm @ 7A , 8V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 2.5 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 2.8 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 16 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 27 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 38 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 17 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7.8 ns
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 6.3 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 39 S.