CSD87330Q3D

Mfr. #: CSD87330Q3D
製造商: Texas Instruments
描述: MOSFET 2N-CH 30V 20A 8SON
生命週期: 製造商新產品
數據表: CSD87330Q3D 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87330Q3D Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerLDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-LSON (3.3x3.3) Configuration Dual This product uses an 2 N-Channel (Half Bridge) FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 900pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an - of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 1.7 ns 1.6 ns of 16 ns. This product has a 6.8 ns 7.5 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 20 A 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. The 9.45 mOhms 3.6 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 9.4 ns 9.1 ns This product has a 4.5 ns 4.5 ns. Qg-Gate-Charge is 4.8 nC 9.6 nC. This product features a 76 S / 51 S of 500 S for high performance.

CSD87330Q3D Image

CSD87330Q3D

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87330Q3D Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Arrays
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerLDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 2 Channel
  • Supplier-Device-Package 8-LSON (3.3x3.3)
  • Configuration Dual
  • FET-Type 2 N-Channel (Half Bridge)
  • Power-Max 6W
  • Transistor-Type 2 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 900pF @ 15V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 20A
  • Rds-On-Max-Id-Vgs -
  • Vgs-th-Max-Id 2.1V @ 250μA
  • Gate-Charge-Qg-Vgs 5.8nC @ 4.5V
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 1.7 ns 1.6 ns
  • Rise-Time 6.8 ns 7.5 ns
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 20 A 20 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
  • Rds-On-Drain-Source-Resistance 9.45 mOhms 3.6 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 9.4 ns 9.1 ns
  • Typical-Turn-On-Delay-Time 4.5 ns 4.5 ns
  • Qg-Gate-Charge 4.8 nC 9.6 nC
  • Forward-Transconductance-Min 76 S / 51 S

CSD87330Q3D

CSD87330Q3D Specifications

CSD87330Q3D FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 8-PowerLDFN.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 2 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-LSON (3.3x3.3)

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed 2 N-Channel (Half Bridge)

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 N-Channel

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 900pF @ 15V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Logic Level Gate.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 20A.

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is -.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 6 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 1.7 ns 1.6 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 6.8 ns 7.5 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 20 A 20 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V 30 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 9.45 mOhms 3.6 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 9.4 ns 9.1 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 4.5 ns 4.5 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 4.8 nC 9.6 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 76 S / 51 S.

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