| Mfr. #: | CSD87334Q3D |
|---|---|
| 製造商: | Texas Instruments |
| 描述: | MOSFET 2N-CH 30V 20A 8SON |
| 生命週期: | 製造商新產品 |
| 數據表: | CSD87334Q3D 數據表 |
Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Dual This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 1260pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an 6 mOhm @ 12A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 17 ns 17 ns of 16 ns. This product has a 7 ns 7 ns of 16 ns. This product's 8 V 8 V. The ID of continuous drain current is 20 A 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 750 mV 750 mV Vgs-th gate-source threshold voltage for efficient power management. The 8.3 mOhms 8.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns 11 ns This product has a 4 ns 4 ns. Qg-Gate-Charge is 750 mV 6.4 nC 6.4 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD87334Q3D Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tape & Reel (TR) Alternate Packaging
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.002677 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-PowerTDFN.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-VSON (3.3x3.3)
A: At what frequency does the Configuration?
Q: The product Configuration is Dual.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual) Asymmetrical
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: At what frequency does the Drain-to-Source-Voltage-Vdss?
Q: The product Drain-to-Source-Voltage-Vdss is 30V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1260pF @ 15V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Logic Level Gate.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 20A.
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 6 mOhm @ 12A, 8V
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 6 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 17 ns 17 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 7 ns 7 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 8 V 8 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 20 A 20 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V 30 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 750 mV 750 mV.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 8.3 mOhms 8.3 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 11 ns 11 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 4 ns 4 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 750 mV 6.4 nC 6.4 nC
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.