| Mfr. #: | MJD112T4 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | Darlington Transistors NPN Power Darlington |
| 生命週期: | 製造商新產品 |
| 數據表: | MJD112T4 數據表 |
Product belongs to the MJD112T4 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 2A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 3V @ 40mA, 4A Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Minimum hfe for DC collector-base gain is 200. 20 uA Maximum Collector Cut-off Current;
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MJD112T4 Specifications
A: What is the Series of the product?
Q: The Series of the product is MJD112T4.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.063493 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed D-Pak
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN - Darlington.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 2A.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 100V.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 1000 @ 2A, 3V
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 3V @ 40mA, 4A
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 100 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 100 V.
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 2 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 200.
A: At what frequency does the Maximum-Collector-Cut-off-Current?
Q: The product Maximum-Collector-Cut-off-Current is 20 uA.