| Mfr. #: | PD55003S-E |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | RF MOSFET Transistors POWER R.F. |
| 生命週期: | 製造商新產品 |
| 數據表: | PD55003S-E 數據表 |


Product belongs to the PD55003-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Straight Lead) Si is the technology used. The device offers a 17 dB at 500 MHz of 26dB. Power-off control: 31.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. The transistor polarity is N-Channel.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD55003S-E Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed PD55003-E
A: What is the Type of the product?
Q: The Type of the product is RF Power MOSFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed PowerSO-10RF (Straight Lead)
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Gain of the product?
Q: The Gain of the product is 17 dB at 500 MHz.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 31.7 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: Is the cutoff frequency of the product Operating-Frequency?
Q: Yes, the product's Operating-Frequency is indeed 1 GHz
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 2.5 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 40 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel