PD57006-E

PD57006-E Overview

Product belongs to the PD57006-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 15 dB at 945 MHz of 26dB. Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 1 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 0.58 S of 500 S for high performance.

PD57006-E Image

PD57006-E Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series PD57006-E
• Type RF Power MOSFET
• Packaging Tube
• Mounting-Style SMD/SMT
• Package-Case PowerSO-10RF (Formed Lead)
• Technology Si
• Gain 15 dB at 945 MHz
• Output-Power 6 W
• Pd-Power-Dissipation 20 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Operating-Frequency 1 GHz
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 1 A
• Vds-Drain-Source-Breakdown-Voltage 65 V
• Transistor-Polarity N-Channel
• Forward-Transconductance-Min 0.58 S

PD57006-E FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed PD57006-E

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is PowerSO-10RF (Formed Lead).

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Gain of the product?

  Q: The Gain of the product is 15 dB at 945 MHz.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 20 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 65 C.

• A: Is the cutoff frequency of the product Operating-Frequency?

  Q: Yes, the product's Operating-Frequency is indeed 1 GHz

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 1 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 0.58 S.