PD84006-E

Mfr. #: PD84006-E
製造商: STMicroelectronics
描述: RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
生命週期: 製造商新產品
數據表: PD84006-E 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PD84006-E Overview

Product belongs to the PD84006-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 13 dB at 870 MHz of 26dB. Power-off control: 59 W Maximum operating temperature of + 150 C The operating frequency is 1 GHz. This product's 15 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. The transistor polarity is N-Channel.

PD84006-E Image

PD84006-E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD84006-E Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series PD84006-E
  • Type RF Power MOSFET
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case PowerSO-10RF (Formed Lead)
  • Technology Si
  • Gain 13 dB at 870 MHz
  • Output-Power 6 W
  • Pd-Power-Dissipation 59 W
  • Maximum-Operating-Temperature + 150 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage 15 V
  • Id-Continuous-Drain-Current 5 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Transistor-Polarity N-Channel

PD84006-E

PD84006-E Specifications

PD84006-E FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed PD84006-E

  • A: At what frequency does the Type?

    Q: The product Type is RF Power MOSFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is PowerSO-10RF (Formed Lead).

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 13 dB at 870 MHz

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 59 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Operating-Frequency of the product?

    Q: The Operating-Frequency of the product is 1 GHz.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 15 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 5 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

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US$857.56
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