PD85006-E

Mfr. #: PD85006-E
製造商: STMicroelectronics
描述: RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
生命週期: 製造商新產品
數據表: PD85006-E 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PD85006-E Overview

Product belongs to the PD85006-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 15 dB at 870 MHz of 26dB. Power-off control: 36.5 W Maximum operating temperature of + 150 C The operating frequency is 1 GHz. This product's 15 V. The ID of continuous drain current is 2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. The transistor polarity is N-Channel.

PD85006-E Image

PD85006-E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD85006-E Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series PD85006-E
  • Type RF Power MOSFET
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case PowerSO-10RF (Formed Lead)
  • Technology Si
  • Gain 15 dB at 870 MHz
  • Output-Power 6 W
  • Pd-Power-Dissipation 36.5 W
  • Maximum-Operating-Temperature + 150 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage 15 V
  • Id-Continuous-Drain-Current 2 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Transistor-Polarity N-Channel

PD85006-E

PD85006-E Specifications

PD85006-E FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is PD85006-E.

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed RF Power MOSFET

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerSO-10RF (Formed Lead)

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 15 dB at 870 MHz.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 36.5 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 1 GHz.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 15 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 40 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

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