STB6NK90ZT4

Mfr. #: STB6NK90ZT4
製造商: STMicroelectronics
描述: MOSFET N-CH 900V 5.8A D2PAK
生命週期: 製造商新產品
數據表: STB6NK90ZT4 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB6NK90ZT4 Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D2PAK Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 900V This product has an 1350pF @ 25V value of 300pF @ 25V. This product's Standard. 5.8A (Tc) continuous drain-ID current at 25°C; This product has an 2 Ohm @ 2.9A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 140 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 45 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 5.8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The 2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 17 ns. Qg-Gate-Charge is 46.5 nC. This product features a 5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STB6NK90ZT4 Image

STB6NK90ZT4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB6NK90ZT4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package D2PAK
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 140W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 900V
  • Input-Capacitance-Ciss-Vds 1350pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 5.8A (Tc)
  • Rds-On-Max-Id-Vgs 2 Ohm @ 2.9A, 10V
  • Vgs-th-Max-Id 4.5V @ 100μA
  • Gate-Charge-Qg-Vgs 60.5nC @ 10V
  • Pd-Power-Dissipation 140 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 20 ns
  • Rise-Time 45 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 5.8 A
  • Vds-Drain-Source-Breakdown-Voltage 900 V
  • Rds-On-Drain-Source-Resistance 2 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 20 ns
  • Typical-Turn-On-Delay-Time 17 ns
  • Qg-Gate-Charge 46.5 nC
  • Forward-Transconductance-Min 5 S
  • Channel-Mode Enhancement

STB6NK90ZT4

STB6NK90ZT4 Specifications

STB6NK90ZT4 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is SuperMESH.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.139332 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed D2PAK

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 900V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1350pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 5.8A (Tc)

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 2 Ohm @ 2.9A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 140 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 20 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 45 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 5.8 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 900 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2 Ohms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 20 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 17 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 46.5 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 5 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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