| Mfr. #: | STB80N20M5 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 200V 61A D2PAK |
| 生命週期: | 製造商新產品 |
| 數據表: | STB80N20M5 數據表 |
Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 190 W Maximum operating temperature of + 150 C This product has a 176 ns of 16 ns. This product has a 31 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 61 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 200 V. This product has a 5 V Vgs-th gate-source threshold voltage for efficient power management. The 23 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 131 ns This product has a 66 ns. Qg-Gate-Charge is 104 nC. This product features a 1.6 V of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB80N20M5 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel STripFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.139332 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-252-3.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 190 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 176 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 31 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 25 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 61 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 200 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 23 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 131 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 66 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 104 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 1.6 V.