| Mfr. #: | STB80NF55L-06T4 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | RF Bipolar Transistors MOSFET N-Ch, 55V-0.005ohms 80A |
| 生命週期: | 製造商新產品 |
| 數據表: | STB80NF55L-06T4 數據表 |


RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 55 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 16 V. Maximum Operating Temperature: + 175 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 80 ns - 55 C minimum operating temperature The power dissipation is 300 W. 180 ns Rise Time Product belongs to the STB80NF55L series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 135 ns; The 32 ns typical turn-on delay time The Unit Weight is 0.139332 oz.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB80NF55L-06T4 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-252-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 55 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 80 A
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 6.5 mOhms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 16 V.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the Fall Time?
Q: The product Fall Time is 80 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 300 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 180 ns.
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed STB80NF55L
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 135 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 32 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.139332 oz.