| Mfr. #: | STF12N120K5 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 1200V 12A TO-220FP |
| 生命週期: | 製造商新產品 |
| 數據表: | STF12N120K5 數據表 |
RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 80 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 2.5 V to 4.5 V Gate-Source Threshold Voltage of Vgs th; 150 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Enhancement Channel Mode Fall Time of 48 ns - 55 C minimum operating temperature The power dissipation is 167 W. 61 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 162 ns; The 24 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF12N120K5 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-252-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 80 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 80 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 6.5 mOhms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 20 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.5 V to 4.5 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 150 nC
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 48 ns
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 167 W
A: At what frequency does the Rise Time?
Q: The product Rise Time is 61 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 162 ns
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 24 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.139332 oz.