STF12N65M5

Mfr. #: STF12N65M5
製造商: STMicroelectronics
描述: MOSFET N-CH 650V 8.5A TO-220FP
生命週期: 製造商新產品
數據表: STF12N65M5 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF12N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 25 W Maximum operating temperature of + 150 C This product has a 24 ns of 16 ns. This product has a 9.5 ns of 16 ns. The ID of continuous drain current is 8.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 430 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 22 nC.

STF12N65M5 Image

STF12N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF12N65M5 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 25 W
  • Maximum-Operating-Temperature + 150 C
  • Fall-Time 24 ns
  • Rise-Time 9.5 ns
  • Id-Continuous-Drain-Current 8.5 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 430 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 22 nC

STF12N65M5

STF12N65M5 Specifications

STF12N65M5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 25 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 24 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 9.5 ns.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 8.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 430 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 22 nC.

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