| Mfr. #: | STF20NF20 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 200V 18A TO-220FP |
| 生命週期: | 製造商新產品 |
| 數據表: | STF20NF20 數據表 |
Product belongs to the STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 200V This product has an 940pF @ 25V value of 300pF @ 25V. This product's Standard. 18A (Tc) continuous drain-ID current at 25°C; This product has an 125 mOhm @ 10A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 90 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 30 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 18 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 200 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 125 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 40 ns This product has a 15 ns. Qg-Gate-Charge is 28 nC. This product features a 13 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF20NF20 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed STripFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.011640 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3 Full Pack
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-220FP
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 200V
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 940pF @ 25V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 18A (Tc).
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 125 mOhm @ 10A, 10V
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 90 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 10 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 30 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 18 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 200 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 125 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 40 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 15 ns
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 28 nC
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 13 S
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.