| Mfr. #: | STFI9N80K5 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 800V 7A I2PAKFP |
| 生命週期: | 製造商新產品 |
| 數據表: | STFI9N80K5 數據表 |
RoHS compliant with Details Input bias current of Through Hole Package type is I2PAKFP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 7 A; The Rds On - Drain-Source Resistance of the product is 900 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 13.6 ns - 55 C minimum operating temperature The power dissipation is 25 W. 5.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 65.3 ns; The 11 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFI9N80K5 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: At what frequency does the Package / Case?
Q: The product Package / Case is I2PAKFP-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 800 V
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 7 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 900 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 30 V
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 3 V
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 12 nC.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: What is the Configuration of the product?
Q: The Configuration of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 13.6 ns
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 25 W.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 5.7 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 65.3 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 11 ns