| Mfr. #: | STFU13N65M2 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 650V 10A TO-220FP |
| 生命週期: | 製造商新產品 |
| 數據表: | STFU13N65M2 數據表 |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 650 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 10 A; The Rds On - Drain-Source Resistance of the product is 430 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 17 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Fall Time of 12 ns - 55 C minimum operating temperature The power dissipation is 25 W. 7.8 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 38 ns; The 11 ns typical turn-on delay time The Unit Weight is 0.081130 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFU13N65M2 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-220FP-3
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 650 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 10 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 430 mOhms
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 25 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 17 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 12 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 25 W.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 7.8 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 38 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 11 ns
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.081130 oz.