STH270N4F3-6

Mfr. #: STH270N4F3-6
製造商: STMicroelectronics
描述: MOSFET N-CH 40V 180A H2PAK-6
生命週期: 製造商新產品
數據表: STH270N4F3-6 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STH270N4F3-6 Overview

Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.056438 oz SMD/SMT Mounting-Style TO-263-7 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 300 W This product has a 45 ns of 16 ns. This product has a 180 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 1.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 110 nC.

STH270N4F3-6 Image

STH270N4F3-6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STH270N4F3-6 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel STripFET
  • Packaging Reel
  • Unit-Weight 0.056438 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-263-7
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 300 W
  • Fall-Time 45 ns
  • Rise-Time 180 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 180 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 1.4 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 110 nC

STH270N4F3-6

STH270N4F3-6 Specifications

STH270N4F3-6 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel STripFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.056438 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-263-7.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 300 W

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 45 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 180 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 180 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 40 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 1.4 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 110 nC.

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