| Mfr. #: | STH6N95K5-2 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 950V 6A |
| 生命週期: | 製造商新產品 |
| 數據表: | STH6N95K5-2 數據表 |
RoHS compliant with Details Input bias current of SMD/SMT Package type is H2PAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 950 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 6 A; The Rds On - Drain-Source Resistance of the product is 1.25 Ohms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 13 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 21 ns - 55 C minimum operating temperature The power dissipation is 110 W. 12 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 33 ns; The 12 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STH6N95K5-2 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: At what frequency does the Package / Case?
Q: The product Package / Case is H2PAK-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 950 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 6 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 1.25 Ohms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 30 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 3 V
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 13 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 21 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 110 W
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 12 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 33 ns
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 12 ns.