| Mfr. #: | STI57N65M5 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 650V 42A I2PAK-3 |
| 生命週期: | 製造商新產品 |
| 數據表: | STI57N65M5 數據表 |
Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style I2PAK-3 Si is the technology used. Power-off control: 250 W The ID of continuous drain current is 26.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STI57N65M5 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh M5
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.050717 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: What is the Package-Case of the product?
Q: The Package-Case of the product is I2PAK-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 26.5 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 63 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel