STN1NK60Z

Mfr. #: STN1NK60Z
製造商: STMicroelectronics
描述: MOSFET N-CH 600V 300MA SOT223
生命週期: 製造商新產品
數據表: STN1NK60Z 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN1NK60Z Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.004395 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-223 Configuration Single Dual Drain This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 94pF @ 25V value of 300pF @ 25V. This product's Standard. 300mA (Tc) continuous drain-ID current at 25°C; This product has an 15 Ohm @ 400mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 300 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 15 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 5.5 ns. Qg-Gate-Charge is 4.9 nC. This product features a 0.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STN1NK60Z Image

STN1NK60Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN1NK60Z Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.004395 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package SOT-223
  • Configuration Single Dual Drain
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 3.3W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 94pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 300mA (Tc)
  • Rds-On-Max-Id-Vgs 15 Ohm @ 400mA, 10V
  • Vgs-th-Max-Id 4.5V @ 50μA
  • Gate-Charge-Qg-Vgs 6.9nC @ 10V
  • Pd-Power-Dissipation 3.3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 18 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 300 mA
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 15 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 5.5 ns
  • Qg-Gate-Charge 4.9 nC
  • Forward-Transconductance-Min 0.5 S
  • Channel-Mode Enhancement

STN1NK60Z

STN1NK60Z Specifications

STN1NK60Z FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed SuperMESH

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.004395 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-261-4, TO-261AA.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-223.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single Dual Drain

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 94pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 300mA (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 15 Ohm @ 400mA, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 3.3 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 18 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 5 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 300 mA.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 15 Ohms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 13 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 5.5 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 4.9 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 0.5 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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