STN2NF10

Mfr. #: STN2NF10
製造商: STMicroelectronics
描述: MOSFET N-CH 100V 2.4A SOT-223
生命週期: 製造商新產品
數據表: STN2NF10 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN2NF10 Overview

Product belongs to the STripFET II series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.004395 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-223 Configuration Single Dual Drain This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 280pF @ 25V value of 300pF @ 25V. This product's Standard. 2.4A (Tc) continuous drain-ID current at 25°C; This product has an 260 mOhm @ 1.2A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3 ns of 16 ns. This product has a 10 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 260 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 6 ns. This product features a 2.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STN2NF10 Image

STN2NF10

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN2NF10 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STripFET II
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.004395 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package SOT-223
  • Configuration Single Dual Drain
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 3.3W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 100V
  • Input-Capacitance-Ciss-Vds 280pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 2.4A (Tc)
  • Rds-On-Max-Id-Vgs 260 mOhm @ 1.2A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 14nC @ 10V
  • Pd-Power-Dissipation 3.3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3 ns
  • Rise-Time 10 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 2 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Rds-On-Drain-Source-Resistance 260 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 20 ns
  • Typical-Turn-On-Delay-Time 6 ns
  • Forward-Transconductance-Min 2.5 S
  • Channel-Mode Enhancement

STN2NF10

STN2NF10 Specifications

STN2NF10 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STripFET II

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.004395 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-261-4, TO-261AA

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-223.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single Dual Drain

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 100V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 280pF @ 25V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 2.4A (Tc)

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 260 mOhm @ 1.2A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 3.3 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 3 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 10 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 2 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 260 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 20 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 6 ns.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 2.5 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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