STN3N45K3

Mfr. #: STN3N45K3
製造商: STMicroelectronics
描述: MOSFET N-CH 450V 0.6A SOT-223
生命週期: 製造商新產品
數據表: STN3N45K3 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN3N45K3 Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.008826 oz SMD/SMT Mounting-Style SOT-223-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 2 W Maximum operating temperature of + 150 C This product's 3 V. The ID of continuous drain current is 600 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 450 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 3.8 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 6 nC.

STN3N45K3 Image

STN3N45K3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN3N45K3 Specifications
  • Manufacturer STM
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Unit-Weight 0.008826 oz
  • Mounting-Style SMD/SMT
  • Package-Case SOT-223-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 2 W
  • Maximum-Operating-Temperature + 150 C
  • Vgs-Gate-Source-Voltage 3 V
  • Id-Continuous-Drain-Current 600 mA
  • Vds-Drain-Source-Breakdown-Voltage 450 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
  • Rds-On-Drain-Source-Resistance 3.8 Ohms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 6 nC

STN3N45K3

STN3N45K3 Specifications

STN3N45K3 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel MDmesh

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.008826 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is SOT-223-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 2 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 3 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 600 mA

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 450 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4.5 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 3.8 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 6 nC

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