STN851

Mfr. #: STN851
製造商: STMicroelectronics
描述: Bipolar Transistors - BJT NPN Lo-Volt Fast Sw
生命週期: 製造商新產品
數據表: STN851 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN851 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.006632 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Surface Mount mounting type Supplier device package: SOT-223 Configuration Single Transistor type: NPN Maximum current collector Ic is 5A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 150 @ 2A, 1V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 200mA, 5A Power-off control: 1.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 320 mV The 150 V voltage rating is 40 V. 7 V rating of 5 V Max DC collector current: 5 A Gain-Bandwidth-Product: 130 MHz Minimum hfe for DC collector-base gain is 150. 350 of 605.

STN851 Image

STN851

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN851 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.006632 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-223
  • Configuration Single
  • Power-Max 1.6W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 5A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 150 @ 2A, 1V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 200mA, 5A
  • Current-Collector-Cutoff-Max 50nA (ICBO)
  • Frequency-Transition 130MHz
  • Pd-Power-Dissipation 1.6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 320 mV
  • Collector-Base-Voltage-VCBO 150 V
  • Emitter-Base-Voltage-VEBO 7 V
  • Maximum-DC-Collector-Current 5 A
  • Gain-Bandwidth-Product-fT 130 MHz
  • DC-Collector-Base-Gain-hfe-Min 150
  • DC-Current-Gain-hFE-Max 350

STN851

STN851 Specifications

STN851 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.006632 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-261-4, TO-261AA.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-223.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 5A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 60V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 150 @ 2A, 1V

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 500mV @ 200mA, 5A.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 1.6 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 320 mV.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 150 V

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 7 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 5 A

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 130 MHz

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 150.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 350.

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1
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US$0.23
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US$20.26
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