| Mfr. #: | STP03D200 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | Darlington Transistors 2kV NPN Darlington trans |
| 生命週期: | 製造商新產品 |
| 數據表: | STP03D200 數據表 |


Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 100mA . Maximum collector-emitter breakdown voltage of 1200V DC current gain minimum (hFE) of Ic/Vce at 200 @ 30mA, 10V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 2V @ 500μA, 50mA Maximum operating temperature of + 150 C Rated VCEO up to 1200 V The transistor polarity is NPN. The 2000 V voltage rating is 40 V. 20 V rating of 5 V Max DC collector current: 0.1 A 100 uA Maximum Collector Cut-off Current;

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP03D200 Specifications
A: At what frequency does the Series?
Q: The product Series is 1000V Transistors.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.081130 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220AB.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN - Darlington.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 100mA.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 1200V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 200 @ 30mA, 10V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 2V @ 500μA, 50mA.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 1200 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 2000 V.
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 20 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 0.1 A.
A: What is the Maximum-Collector-Cut-off-Current of the product?
Q: The Maximum-Collector-Cut-off-Current of the product is 100 uA.