| Mfr. #: | STP160N3LL |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 30V 120A TO-220AB |
| 生命週期: | 製造商新產品 |
| 數據表: | STP160N3LL 數據表 |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-220-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 30 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 120 A; The Rds On - Drain-Source Resistance of the product is 3.2 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 1 V to 2.5 V Gate-Source Threshold Voltage of Vgs th; 42 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Enhancement Channel Mode Fall Time of 23.4 ns - 55 C minimum operating temperature The power dissipation is 136 W. 91 ns Rise Time Product belongs to the N-channel STripFET series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 24.5 ns; The 19 ns typical turn-on delay time The Unit Weight is 0.011640 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP160N3LL Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-220-3
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 30 V
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 120 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 3.2 mOhms
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 20 V
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1 V to 2.5 V
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 42 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 23.4 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 136 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 91 ns
A: What is the Series of the product?
Q: The Series of the product is N-channel STripFET.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 24.5 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 19 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.011640 oz.