| Mfr. #: | STP170N8F7 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 80V 120A TO-220AB |
| 生命週期: | 製造商新產品 |
| 數據表: | STP170N8F7 數據表 |
Product belongs to the N-channel STripFET series. Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Power-off control: 250 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 53 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V to 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 3.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 79 ns This product has a 38 ns. Qg-Gate-Charge is 120 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP170N8F7 Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel STripFET.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.011640 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 250 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 37 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 53 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 120 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 80 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.5 V to 4.5 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 3.9 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 79 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 38 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 120 nC
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.