STP21N90K5

Mfr. #: STP21N90K5
製造商: STMicroelectronics
描述: MOSFET N-CH 900V 18.5A TO-220
生命週期: 製造商新產品
數據表: STP21N90K5 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP21N90K5 Overview

Product belongs to the SuperMESH5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220-3 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 900V This product has an 1645pF @ 100V value of 300pF @ 25V. This product's Standard. 18.5A (Tc) continuous drain-ID current at 25°C; This product has an 299 mOhm @ 9A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 30 V. The ID of continuous drain current is 18.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The 299 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 43 nC.

STP21N90K5 Image

STP21N90K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP21N90K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH5
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220-3
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 250W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 900V
  • Input-Capacitance-Ciss-Vds 1645pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 18.5A (Tc)
  • Rds-On-Max-Id-Vgs 299 mOhm @ 9A, 10V
  • Vgs-th-Max-Id 5V @ 100μA
  • Gate-Charge-Qg-Vgs 43nC @ 10V
  • Pd-Power-Dissipation 250 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 18.5 A
  • Vds-Drain-Source-Breakdown-Voltage 900 V
  • Rds-On-Drain-Source-Resistance 299 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 43 nC

STP21N90K5

STP21N90K5 Specifications

STP21N90K5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is SuperMESH5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220-3

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 900V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1645pF @ 100V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 18.5A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 299 mOhm @ 9A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 250 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 18.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 900 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 299 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 43 nC

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