| Mfr. #: | STP30N10F7 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 100V 32A TO220AB |
| 生命週期: | 製造商新產品 |
| 數據表: | STP30N10F7 數據表 |
Tube is the packaging method for this product Through Hole Mounting-Style TO-220 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Transistor type: 1 N-Channel Power-off control: 50 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 5.6 ns of 16 ns. This product has a 17.5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 32 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 22 ns This product has a 12 ns. Qg-Gate-Charge is 19 nC. This product features a - of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance. The -.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP30N10F7 Specifications
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 50 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 5.6 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 17.5 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 32 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4.5 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 24 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 22 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 12 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 19 nC
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is -.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement
A: Is the cutoff frequency of the product Development-Kit?
Q: Yes, the product's Development-Kit is indeed -