STP30N65M5

STP30N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 2880pF @ 100V value of 300pF @ 25V. This product's Standard. 22A (Tc) continuous drain-ID current at 25°C; This product has an 139 mOhm @ 11A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 140 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 22 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 125 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 50 ns Qg-Gate-Charge is 64 nC.

STP30N65M5 Image

STP30N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh V
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 140W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 2880pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 22A (Tc)
• Rds-On-Max-Id-Vgs 139 mOhm @ 11A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 64nC @ 10V
• Pd-Power-Dissipation 140 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 10 ns
• Rise-Time 8 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 22 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 125 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 50 ns
• Qg-Gate-Charge 64 nC

STP30N65M5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh V.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-220AB.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 650V

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 2880pF @ 100V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 22A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 139 mOhm @ 11A, 10V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 140 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 10 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 8 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 22 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 125 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 50 ns

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 64 nC.