STP30NF10

STP30NF10 Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 1180pF @ 25V value of 300pF @ 25V. This product's Standard. 35A (Tc) continuous drain-ID current at 25°C; This product has an 45 mOhm @ 15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 115 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 40 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 35 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 38 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 15 ns. This product features a 10 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP30NF10 Image

STP30NF10 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series STripFET II
• Packaging Tube
• Unit-Weight 0.050717 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 115W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 100V
• Input-Capacitance-Ciss-Vds 1180pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 35A (Tc)
• Rds-On-Max-Id-Vgs 45 mOhm @ 15A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 55nC @ 10V
• Pd-Power-Dissipation 115 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 10 ns
• Rise-Time 40 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 35 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Rds-On-Drain-Source-Resistance 38 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 45 ns
• Typical-Turn-On-Delay-Time 15 ns
• Forward-Transconductance-Min 10 S
• Channel-Mode Enhancement

STP30NF10 FAQ

• A: At what frequency does the Series?

  Q: The product Series is STripFET II.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.050717 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220AB.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 100V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 1180pF @ 25V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 35A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 45 mOhm @ 15A, 10V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 115 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 10 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 40 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 35 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 38 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 45 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 15 ns

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 10 S.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.