| Mfr. #: | STP310N10F7 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N CH 100V 180A TO-220 |
| 生命週期: | 製造商新產品 |
| 數據表: | STP310N10F7 數據表 |
Product belongs to the DeepGATE, STripFET VII series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 100V This product has an 12800pF @ 25V value of 300pF @ 25V. This product's Standard. 180A (Tc) continuous drain-ID current at 25°C; This product has an 2.7 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 315 W This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 2.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 180 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP310N10F7 Specifications
A: What is the Series of the product?
Q: The Series of the product is DeepGATE, STripFET VII.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.011640 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220.
A: What is the FET-Type of the product?
Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 100V.
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 12800pF @ 25V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 180A (Tc).
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 2.7 mOhm @ 60A, 10V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 315 W.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 180 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.7 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 180 nC