STP315N10F7

Mfr. #: STP315N10F7
製造商: STMicroelectronics
描述: MOSFET N-CH 100V 180A TO-220AB
生命週期: 製造商新產品
數據表: STP315N10F7 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP315N10F7 Overview

Product belongs to the DeepGATE, STripFET VII series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 12800pF @ 25V value of 300pF @ 25V. This product's Standard. 180A (Tc) continuous drain-ID current at 25°C; This product has an 2.7 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 315 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 40 ns of 16 ns. This product has a 108 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 3.5 V Vgs-th gate-source threshold voltage for efficient power management. The 2.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 148 ns This product has a 62 ns. Qg-Gate-Charge is 180 nC.

STP315N10F7 Image

STP315N10F7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP315N10F7 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series DeepGATE, STripFET VII
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 315W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 100V
  • Input-Capacitance-Ciss-Vds 12800pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 180A (Tc)
  • Rds-On-Max-Id-Vgs 2.7 mOhm @ 60A, 10V
  • Vgs-th-Max-Id 4.5V @ 250μA
  • Gate-Charge-Qg-Vgs 180nC @ 10V
  • Pd-Power-Dissipation 315 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 40 ns
  • Rise-Time 108 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 180 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3.5 V
  • Rds-On-Drain-Source-Resistance 2.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 148 ns
  • Typical-Turn-On-Delay-Time 62 ns
  • Qg-Gate-Charge 180 nC

STP315N10F7

STP315N10F7 Specifications

STP315N10F7 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is DeepGATE, STripFET VII.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 175°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-220.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 100V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 12800pF @ 25V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 180A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 2.7 mOhm @ 60A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 315 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 40 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 108 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 180 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3.5 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.3 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 148 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 62 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 180 nC.

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