STP4N52K3

STP4N52K3 Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 20 W This product has a 14 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 525 V. This product has a 3.75 V Vgs-th gate-source threshold voltage for efficient power management. The 2.1 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 11 nC.

STP4N52K3 Image

STP4N52K3 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 20 W
• Fall-Time 14 ns
• Rise-Time 7 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 2.5 A
• Vds-Drain-Source-Breakdown-Voltage 525 V
• Vgs-th-Gate-Source-Threshold-Voltage 3.75 V
• Rds-On-Drain-Source-Resistance 2.1 Ohms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 11 nC

STP4N52K3 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel MDmesh.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 20 W.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 14 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 7 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2.5 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 525 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3.75 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.1 Ohms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 11 nC.