STP4N80K5

Mfr. #: STP4N80K5
製造商: STMicroelectronics
描述: Darlington Transistors MOSFET N-CH 800V 2.1Ohm 3A Zener-protected
生命週期: 製造商新產品
數據表: STP4N80K5 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP4N80K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style Trade name: SuperMesh. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 21 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 2.1 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 36 ns This product has a 16.5 ns. Qg-Gate-Charge is 10.5 nC. This product operates in Enhancement channel mode for optimal performance.

STP4N80K5 Image

STP4N80K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP4N80K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Tradename SuperMesh
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 60 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 21 ns
  • Rise-Time 15 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 3 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 2.1 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 36 ns
  • Typical-Turn-On-Delay-Time 16.5 ns
  • Qg-Gate-Charge 10.5 nC
  • Channel-Mode Enhancement

STP4N80K5

STP4N80K5 Specifications

STP4N80K5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh K5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is SuperMesh.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 60 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 21 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 15 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 3 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 800 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.1 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 36 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 16.5 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 10.5 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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