| Mfr. #: | STP5NK80Z |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 800V 4.3A TO-220 |
| 生命週期: | 製造商新產品 |
| 數據表: | STP5NK80Z 數據表 |
Product belongs to the PowerMESH series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 910pF @ 25V value of 300pF @ 25V. This product's Standard. 4.3A (Tc) continuous drain-ID current at 25°C; This product has an 2.4 Ohm @ 2.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 25 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 2.4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 18 ns. Qg-Gate-Charge is 32.4 nC. This product features a 4.25 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP5NK80Z Specifications
A: What is the Series of the product?
Q: The Series of the product is PowerMESH.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.050717 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 800V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 910pF @ 25V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 4.3A (Tc).
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 2.4 Ohm @ 2.15A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 30 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 25 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 30 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 4.3 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 800 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.4 Ohms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 45 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 18 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 32.4 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 4.25 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.