STP6N120K3

STP6N120K3 Overview

Product belongs to the SuperMESH3 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1200V (1.2kV) This product has an 1050pF @ 100V value of 300pF @ 25V. This product's Standard. 6A (Tc) continuous drain-ID current at 25°C; This product has an 2.4 Ohm @ 2.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 150 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 32 ns of 16 ns. This product has a 12 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1200 V. The 2.4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 58 ns This product has a 30 ns. Qg-Gate-Charge is 34 nC. This product operates in Enhancement channel mode for optimal performance.

STP6N120K3 Image

STP6N120K3 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series SuperMESH3
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 150W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1200V (1.2kV)
• Input-Capacitance-Ciss-Vds 1050pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 6A (Tc)
• Rds-On-Max-Id-Vgs 2.4 Ohm @ 2.5A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 34nC @ 10V
• Pd-Power-Dissipation 150 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 32 ns
• Rise-Time 12 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 6 A
• Vds-Drain-Source-Breakdown-Voltage 1200 V
• Rds-On-Drain-Source-Resistance 2.4 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 58 ns
• Typical-Turn-On-Delay-Time 30 ns
• Qg-Gate-Charge 34 nC
• Channel-Mode Enhancement

STP6N120K3 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SuperMESH3

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-220.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 1200V (1.2kV).

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 1050pF @ 100V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 6A (Tc)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 2.4 Ohm @ 2.5A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 150 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 32 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 12 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 6 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 1200 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.4 Ohms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 58 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 30 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 34 nC.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.