STP80NF55L-06

Mfr. #: STP80NF55L-06
製造商: STMicroelectronics
描述: MOSFET N-CH 55V 80A TO-220
生命週期: 製造商新產品
數據表: STP80NF55L-06 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP80NF55L-06 Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 55V This product has an 4850pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 80A (Tc) continuous drain-ID current at 25°C; This product has an 6.5 mOhm @ 40A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 80 ns of 16 ns. This product has a 180 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 80 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 55 V. The 6.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 135 ns This product has a 32 ns. This product features a 150 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP80NF55L-06 Image

STP80NF55L-06

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP80NF55L-06 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series STripFET II
  • Packaging Tube
  • Unit-Weight 0.050717 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 300W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 55V
  • Input-Capacitance-Ciss-Vds 4850pF @ 25V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 80A (Tc)
  • Rds-On-Max-Id-Vgs 6.5 mOhm @ 40A, 10V
  • Vgs-th-Max-Id 1V @ 250μA
  • Gate-Charge-Qg-Vgs 136nC @ 5V
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 80 ns
  • Rise-Time 180 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 80 A
  • Vds-Drain-Source-Breakdown-Voltage 55 V
  • Rds-On-Drain-Source-Resistance 6.5 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 135 ns
  • Typical-Turn-On-Delay-Time 32 ns
  • Forward-Transconductance-Min 150 S
  • Channel-Mode Enhancement

STP80NF55L-06

STP80NF55L-06 Specifications

STP80NF55L-06 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STripFET II.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.050717 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-220AB.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 55V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 4850pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Logic Level Gate.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 80A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 6.5 mOhm @ 40A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 300 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 80 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 180 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 16 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 80 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 55 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 6.5 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 135 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 32 ns

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 150 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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