| Mfr. #: | STU6N65M2 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | Darlington Transistors MOSFET POWER MOSFET |
| 生命週期: | 製造商新產品 |
| 數據表: | STU6N65M2 數據表 |


Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style Trade name: MDmesh. IPAK-3 Si is the technology used. Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 1.35 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6.5 ns This product has a 19 ns. Qg-Gate-Charge is 9.8 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU6N65M2 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh M2.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.139332 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed MDmesh
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed IPAK-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 60 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 20 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 7 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 4 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 1.35 Ohms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 6.5 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 19 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 9.8 nC