STW12N150K5

STW12N150K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 1500V (1.5kV) This product has an 1360pF @ 100V value of 300pF @ 25V. This product's Standard. 7A (Tc) continuous drain-ID current at 25°C; This product has an 1.9 Ohm @ 3.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 8 ns of 16 ns. This product's +/- 30 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1.5 kV. This product has a 3 V to 5 V Vgs-th gate-source threshold voltage for efficient power management. The 1.9 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 90 ns This product has a 25 ns. Qg-Gate-Charge is 47 nC. This product operates in Enhancement channel mode for optimal performance.

STW12N150K5 Image

STW12N150K5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh K5
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 250W
• Drain-to-Source-Voltage-Vdss 1500V (1.5kV)
• Input-Capacitance-Ciss-Vds 1360pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 7A (Tc)
• Rds-On-Max-Id-Vgs 1.9 Ohm @ 3.5A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 47nC @ 10V
• Pd-Power-Dissipation 250 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 37 ns
• Rise-Time 8 ns
• Vgs-Gate-Source-Voltage +/- 30 V
• Id-Continuous-Drain-Current 7 A
• Vds-Drain-Source-Breakdown-Voltage 1.5 kV
• Vgs-th-Gate-Source-Threshold-Voltage 3 V to 5 V
• Rds-On-Drain-Source-Resistance 1.9 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 90 ns
• Typical-Turn-On-Delay-Time 25 ns
• Qg-Gate-Charge 47 nC
• Channel-Mode Enhancement

STW12N150K5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh K5.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 1.340411 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-247-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 1500V (1.5kV)

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 1360pF @ 100V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 7A (Tc)

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 1.9 Ohm @ 3.5A, 10V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 250 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 37 ns

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 8 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is +/- 30 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 7 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 1.5 kV.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V to 5 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 1.9 Ohms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 90 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 25 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 47 nC.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.