| Mfr. #: | STW13N60M2 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 600V 11A TO-247 |
| 生命週期: | 製造商新產品 |
| 數據表: | STW13N60M2 數據表 |
Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9.5 ns of 16 ns. This product has a 10 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 380 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 41 ns This product has a 11 ns. Qg-Gate-Charge is 17 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW13N60M2 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh M2
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 110 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 9.5 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 10 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 25 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 11 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 380 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 41 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 11 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 17 nC.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.