STW20N65M5

STW20N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 130 W This product has a 7.5 ns of 16 ns. This product has a 7.5 ns of 16 ns. This product's 650 V. The ID of continuous drain current is 18 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 190 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 36 nC.

STW20N65M5 Image

STW20N65M5 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series MDmesh M5
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 130 W
• Fall-Time 7.5 ns
• Rise-Time 7.5 ns
• Vgs-Gate-Source-Voltage 650 V
• Id-Continuous-Drain-Current 18 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 190 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 36 nC

STW20N65M5 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh M5.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 130 W.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 7.5 ns

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 7.5 ns

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 650 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 18 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 190 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 36 nC