| Mfr. #: | STW27N60M2-EP |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 600V 20A TO-220 |
| 生命週期: | 製造商新產品 |
| 數據表: | STW27N60M2-EP 數據表 |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 20 A; The Rds On - Drain-Source Resistance of the product is 163 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 2 V Gate-Source Threshold Voltage of Vgs th; 33 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 6.3 ns - 55 C minimum operating temperature The power dissipation is 170 W. 8.1 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 55.6 ns; The 13.4 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW27N60M2-EP Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-247-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 600 V
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 20 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 163 mOhms
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 25 V
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 2 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 33 nC
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: What is the Configuration of the product?
Q: The Configuration of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 6.3 ns
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 170 W.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 8.1 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 55.6 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 13.4 ns