| Mfr. #: | STW31N65M5 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 650V 22A TO-247 |
| 生命週期: | 製造商新產品 |
| 數據表: | STW31N65M5 數據表 |
Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Power-off control: 150 W The ID of continuous drain current is 13.9 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 148 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW31N65M5 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh M5.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 1.340411 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-247-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 150 W.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 13.9 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 148 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel