STW54NM65ND

Mfr. #: STW54NM65ND
製造商: STMicroelectronics
描述: IGBT Transistors MOSFET N-Ch 650V 0.055 Ohm 49A FDmesh II
生命週期: 製造商新產品
數據表: STW54NM65ND 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW54NM65ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 350 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 25 V. The ID of continuous drain current is 49 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 65 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 188 nC.

STW54NM65ND Image

STW54NM65ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW54NM65ND Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 350 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 49 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Rds-On-Drain-Source-Resistance 65 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 188 nC

STW54NM65ND

STW54NM65ND Specifications

STW54NM65ND FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 350 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 49 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 65 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 188 nC.

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數量
單價
小計金額
1
US$15.88
US$15.88
10
US$15.09
US$150.85
100
US$14.29
US$1 429.11
500
US$13.50
US$6 748.60
1000
US$12.70
US$12 703.20
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