STW6N120K3

STW6N120K3 Overview

Product belongs to the SuperMESH3 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1200V (1.2kV) This product has an 1050pF @ 100V value of 300pF @ 25V. This product's Standard. 6A (Tc) continuous drain-ID current at 25°C; This product has an 2.4 Ohm @ 2.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 150 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 32 ns of 16 ns. This product has a 12 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1200 V. The 2.4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 58 ns This product has a 30 ns. Qg-Gate-Charge is 34 nC. This product operates in Enhancement channel mode for optimal performance.

STW6N120K3 Image

STW6N120K3 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series SuperMESH3
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 150W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1200V (1.2kV)
• Input-Capacitance-Ciss-Vds 1050pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 6A (Tc)
• Rds-On-Max-Id-Vgs 2.4 Ohm @ 2.5A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 34nC @ 10V
• Pd-Power-Dissipation 150 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 32 ns
• Rise-Time 12 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 6 A
• Vds-Drain-Source-Breakdown-Voltage 1200 V
• Rds-On-Drain-Source-Resistance 2.4 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 58 ns
• Typical-Turn-On-Delay-Time 30 ns
• Qg-Gate-Charge 34 nC
• Channel-Mode Enhancement

STW6N120K3 FAQ

• A: At what frequency does the Series?

  Q: The product Series is SuperMESH3.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 1.340411 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 1200V (1.2kV).

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 1050pF @ 100V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 6A (Tc)

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 2.4 Ohm @ 2.5A, 10V

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 150 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 32 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 12 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 6 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1200 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.4 Ohms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 58 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 30 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 34 nC

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.