| Mfr. #: | STW7N105K5 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | IGBT Transistors MOSFET POWER MOSFET |
| 生命週期: | 製造商新產品 |
| 數據表: | STW7N105K5 數據表 |
Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 25 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1050 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 17.5 ns. Qg-Gate-Charge is 17 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW7N105K5 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh K5.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 25 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 7 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 30 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 4 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 1050 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 2 Ohms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 43 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 17.5 ns
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 17 nC
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.